Hysteretic effects and magnetotransport of electrically switched CuMnAs
Jan Zub\'a\v{c}, Zden\v{e}k Ka\v{s}par, Filip Krizek, Tobias, F\"orster, Richard P. Campion, V\'it Nov\'ak, Tom\'a\v{s} Jungwirth, Kamil, Olejn\'ik
TL;DR
This study investigates how electrical switching affects magnetoresistance in antiferromagnetic CuMnAs, revealing hysteretic effects and resilience to high magnetic fields, advancing understanding of antiferromagnetic spintronics.
Contribution
It demonstrates electrical switching-induced changes in magnetoresistance and hysteretic phenomena in CuMnAs under high magnetic fields, providing new insights into antiferromagnetic spintronic materials.
Findings
Hysteretic magnetoresistance effects observed in CuMnAs
Switched states show resilience to magnetic fields up to 60 T
Electrical pulses effectively induce high-resistive states
Abstract
Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching into high-resistive states using electrical pulses. By employing magnetic field sweeps up to 14 T and magnetic field pulses up to 60 T, we reveal hysteretic phenomena and changes in the magnetoresistance, as well as the resilience of the switching signal in CuMnAs to the high magnetic field. These properties of the switched state are discussed in the context of recent studies of antiferromagnetic textures in CuMnAs.
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