Detecting induced $p \pm ip$ pairing at the Al-InAs interface with a quantum microwave circuit
D. Phan, J. Senior, A. Ghazaryan, M. Hatefipour, W. M., Strickland, J. Shabani, M. Serbyn, A. P. Higginbotham
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Abstract
Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a strong fingerprint from the two-component nature of the hybrid system, and quantitatively compare with a theory that includes the contribution of intraband pairing in the InAs, as well as the emergence of Bogoliubov-Fermi surfaces due to magnetic field. Separately resolving the Al and InAs contributions allows us to determine the carrier density and mobility in the InAs.
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Taxonomy
TopicsQuantum and electron transport phenomena · Quantum Information and Cryptography · Semiconductor Quantum Structures and Devices