Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices
Jun Ge, Yanzhao Liu, Pinyuan Wang, Zhiming Xu, Jiaheng Li, Hao Li,, Zihan Yan, Yang Wu, Yong Xu, Jian Wang

TL;DR
This paper demonstrates a magnetization-controlled topological quantum phase transition in MnBi2Te4 devices, switching between Chern insulator and magnetic insulator states through angle-dependent magnetic field manipulation.
Contribution
It reveals a magnetization-tuned topological phase transition in MnBi2Te4, combining experimental transport measurements with theoretical analysis to control topological states.
Findings
Detection of a transition from Chern insulator to magnetic insulator with gapped Dirac surface states
Observation of colossal, anisotropic magnetoresistance during the transition
Theoretical modeling confirms the role of magnetic state changes in topological phase transition
Abstract
Recently, the intrinsic magnetic topological insulator MnBi2Te4 has attracted enormous research interest due to the great success in realizing exotic topological quantum states, such as the quantum anomalous Hall effect (QAHE), axion insulator state, high-Chern-number and high-temperature Chern insulator states. One key issue in this field is to effectively manipulate these states and control topological phase transitions. Here, by systematic angle-dependent transport measurements, we reveal a magnetization-tuned topological quantum phase transition from Chern insulator to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. Specifically, as the magnetic field is tilted away from the out-of-plane direction by around 40-60 degrees, the Hall resistance deviates from the quantization value and a colossal, anisotropic magnetoresistance is detected. The theoretical…
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