Ferroelectric Tunneling Junctions for Edge Computing
Erika Covi, Quang T. Duong, Suzanne Lancaster, Viktor Havel, Jean, Coignus, Justine Barbot, Ole Richter, Philip Klein, Elisabetta Chicca,, Laurent Grenouillet, Athanasios Dimoulas, Thomas Mikolajick, and Stefan, Slesazeck
TL;DR
This paper investigates ferroelectric hafnium-zirconium oxide tunneling junctions, highlighting their energy efficiency and exploring their circuit design implications for edge computing applications.
Contribution
It provides a detailed analysis of FTJ electrical features and discusses circuit design considerations for edge computing using these devices.
Findings
FTJ devices exhibit specific electrical characteristics.
Design considerations for FTJ-based circuits are discussed.
Implications for energy-efficient edge computing are highlighted.
Abstract
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.