Impact of excitation energy on hot carrier properties in InGaAs MQW structure
Hamidreza Esmaielpour, Laurent Lombez, Maxime Giteau, Jean-Francois, Guillemoles, and Daniel Suchet

TL;DR
This study investigates how excitation energy influences hot carrier properties in InGaAs MQW structures, providing insights into their thermodynamic behavior and scattering mechanisms crucial for hot carrier solar cell development.
Contribution
It offers a detailed analysis of hot carrier thermodynamics and scattering effects in InGaAs MQWs under different excitation energies and temperatures, advancing understanding for hot carrier solar cells.
Findings
Hot carrier temperature varies with excitation energy.
Spectral linewidth broadening depends on thermalized power and phonon scattering.
Full PL spectrum fitting reveals quasi-Fermi level splitting.
Abstract
Hot carrier solar cells aim to overcome the theoretical limit of single-junction photovoltaic devices by suppressing the thermalization of hot carriers and extracting them through energy selective contacts. Designing efficient hot carrier absorbers requires further investigation on hot carrier properties in materials. Although the thermalization of hot carriers is responsible for a large portion of energy loss in solar cells, it is still one of the least understood phenomena in semiconductors. Here, the impact of excitation energy on the properties of photo-generated hot carriers in an InGaAs multi-quantum well (MQW) structure at various lattice temperatures and excitation powers is studied. Photoluminescence (PL) emission of the sample is detected by a hyperspectral luminescence imager, which creates spectrally and spatially resolved PL maps. The thermodynamic properties of hot…
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
