Effect of Vanadium Thickness and Deposition Temperature on VO2 Synthesis using Atmospheric Pressure Thermal Oxidation
Ashok P, Yogesh Singh Chauhan, and Amit Verma

TL;DR
This study investigates how vanadium film thickness and deposition temperature influence the optimal atmospheric pressure thermal oxidation process for synthesizing VO2 with desirable phase transition properties.
Contribution
It introduces a model linking V film thickness and deposition temperature to the optimal oxidation duration, enhancing control over VO2 synthesis.
Findings
Optimal oxidation duration increases with V film thickness.
Higher V deposition temperatures require longer oxidation times.
A parabolic law models the relationship between parameters and oxidation time.
Abstract
Vanadium dioxide (VO2) is a phase transition material that undergoes a reversible insulator-metal phase transition at ~ 68 C. Atmospheric pressure thermal oxidation (APTO) of vanadium (V) is a simple VO2 synthesis method in which V thin film is oxidized in open air. For an optimum oxidation duration, VO2 films are obtained with good phase transition properties. We recently reported a modified APTO process using a step temperature profile for oxidation (Thin Solid Films 706, 138003 (2020)). We demonstrated an ultra-low thermal budget synthesis of VO2 thin films with good electrical and optical phase transition properties. For a 130 nm room-temperature RF sputtered V thin film, an optimum oxidation duration of ~ 30 s was obtained. In this work, we study how the starting V film thickness and deposition temperature affects the optimum oxidation duration. V thin films of varying thickness…
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