Bridging the gap between atomically thin semiconductors and metal leads

TL;DR

This paper presents a novel interfacial engineering strategy to create nearly barrier-free electrical contacts with atomically thin TMDSCs, significantly enhancing device performance and enabling advanced electronic applications.

Contribution

The study introduces a method to achieve near ohmic contacts with TMDSCs by engineering interfacial bonding, improving carrier injection and device performance.

Findings

Ultralow contact resistance down to 90 Ohm um in MoS2

Ultrahigh mobility up to 358,000 cm2V-1s-1 in WSe2

Robust ohmic behavior from room to cryogenic temperatures

Abstract

Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices for exploring their unconventional physical properties and realizing potential electronic applications. Here we demonstrate a strategy to achieve nearly barrier-free electrical contacts with few-layer TMDSCs by engineering interfacial bonding distortion. The carrier-injection efficiency of such electrical junction is substantially increased with robust ohmic behaviors from room to cryogenic temperatures. The performance enhancements of TMDSC field-effect transistors are well reflected by the ultralow contact resistance (down to 90 Ohm um in MoS2, towards the quantum limit), the ultrahigh field-effect mobility (up to 358,000 cm2V-1s-1 in WSe2) and the prominent transport characteristics at cryogenic temperatures. This method also offers new possibilities of the local manipulation of structures and electronic properties for TMDSC device design.