Solid Source Metal-Organic Molecular Beam Epitaxy of Epitaxial RuO2
William Nunn, Sreejith Nair, Hwanhui Yun, Anusha Kamath Manjeshwar,, Anil Rajapitamahuni, Dooyong Lee, K. Andre Mkhoyan, and Bharat Jalan

TL;DR
This paper reports the successful growth of high-quality epitaxial RuO2 films using a novel solid-source metal-organic MBE technique, overcoming challenges related to Ru's low vapor pressure and oxidation potential.
Contribution
It introduces a new solid-source MOMBE method for synthesizing epitaxial RuO2 films, enabling controlled growth of complex oxides of difficult-to-evaporate metals.
Findings
Epitaxial RuO2 films achieved at 300°C with bulk-like resistivity
High-quality films confirmed by X-ray diffraction and TEM
Strain and substrate orientation influence film properties
Abstract
A seemingly simple oxide with a rutile structure, RuO2 has been shown to possess several intriguing properties ranging from strain-stabilized superconductivity to a strong catalytic activity. Much interest has arisen surrounding the controlled synthesis of RuO2 films but, unfortunately, utilizing atomically-controlled deposition techniques like molecular beam epitaxy (MBE) has been difficult due to the ultra-low vapor pressure and low oxidation potential of Ru. Here, we demonstrate the growth of epitaxial, single-crystalline RuO2 films on different substrate orientations using the novel solid-source metal-organic (MO) MBE. This approach circumvents these issues by supplying Ru using a pre-oxidized solid metal-organic precursor containing Ru. High-quality epitaxial RuO2 films with bulk-like room-temperature resistivity of 55 micro-ohm-cm were obtained at a substrate temperature as low as…
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