Analytical Model for Gaussian Disorder Traps in Organic Thin-Film Transistor

TL;DR

This paper introduces an analytical model for Gaussian disorder traps in organic thin-film transistors, combining statistical methods to accurately predict trapping dynamics and validated through simulation and experimental data.

Contribution

The paper presents a novel analytical model that simplifies the calculation of trapping and detrapping rates in organic semiconductors with Gaussian disorder.

Findings

Model accurately predicts trapping rates in organic semiconductors.

Simulation results agree well with experimental measurements.

Provides a new tool for designing better organic transistors.

Abstract

Structural defects and chemical impurities exist in organic semiconductors acting as trap centers for the excited states. This work presents a novel analytical model to calculate the trapping and detrapping rates between two Gaussian density of states. Miller-Abrahams rate and Fermi-Dirac statistics are employed in this model. The introduction of effective filled and empty sites for correlated bands greatly simplifies the expression of recombination rate. A technology computer-aided design simulator was used to simulate the donor-like traps in an organic semiconductor DPP-DTT based thin-film transistor, showing good agreement with the measured transfer characteristic.