Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling

TL;DR

This paper presents precise TCAD simulations of LGAD devices, introducing an improved radiation damage model that accurately predicts leakage current post-irradiation, aiding in the development of radiation-hard sensors.

Contribution

The paper introduces an enhanced LGAD radiation damage model combining local acceptor removal with deep energy levels, validated by simulations matching experimental data.

Findings

Simulation accurately predicts leakage current after irradiation

The improved model aligns with experimental measurements

Capacitance and breakdown voltage are consistent with measurements

Abstract

We report precise TCAD simulations of IHEP-IME-v1 Low Gain Avalanche Diode (LGAD) calibrated by secondary ion mass spectroscopy (SIMS). Our setup allows us to evaluate the leakage current, capacitance, and breakdown voltage of LGAD, which agree with measurements' results before irradiation. And we propose an improved LGAD Radiation Damage Model (LRDM) which combines local acceptor removal with global deep energy levels. The LRDM is applied to the IHEP-IME-v1 LGAD and able to predict the leakage current well at -30 $^{\circ}$C after an irradiation fluence of $ \Phi_{eq}=2.5 \times 10^{15} ~n_{eq}/cm^{2}$. The charge collection efficiency (CCE) is under development.