Strain induced coupling and quantum information processing with hexagonal boron nitride quantum emitters
F. T. Tabesh, Q. Hassanzada, M. Hadian, A. Hashemi, I. Abdolhosseini, Sarsari, and M. Abdi

TL;DR
This paper proposes a novel electromechanical scheme using strain-coupled boron vacancy centers in hexagonal boron nitride for quantum information processing, demonstrating room-temperature entanglement and quantum simulation capabilities.
Contribution
It introduces a new strain-based coupling method for boron vacancy centers in hBN, enabling steady-state entanglement and quantum simulation at room temperature.
Findings
Achieves steady-state entanglement at room temperature.
Demonstrates robustness of entanglement against mis-positioning.
Shows potential for quantum simulation of the Dicke-Ising model.
Abstract
We propose an electromechanical scheme where the electronic degrees of freedom of boron vacancy color centers hosted by a hexagonal boron nitride nanoribbon are coupled for quantum information processing. The mutual coupling of color centers is provided via their coupling to the mechanical motion of the ribbon, which in turn stems from the local strain. The coupling strengths are computed by performing ab-initio calculations. The density functional theory (DFT) results for boron vacancy centers on boron nitride monolayers reveal a huge strain susceptibility. In our analysis, we take into account the effect of all flexural modes and show that despite the thermal noise introduced through the vibrations one can achieve steady-state entanglement between two and more number of qubits that survives even at room temperature. Moreover, the entanglement is robust against mis-positioning of the…
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