Signature of topological non-trivial band structure in Ta$_{3}$SiTe$_{6}$

TL;DR

This paper investigates the topological electronic properties of Ta$_{3}$SiTe$_{6}$, revealing nontrivial band structure signatures through magnetotransport measurements, including nonsaturating magnetoresistance and a robust planar Hall effect.

Contribution

It provides the first detailed magnetotransport characterization of Ta$_{3}$SiTe$_{6}$, confirming its topological semimetal nature and associated electronic phenomena.

Findings

Nonsaturating magnetoresistance observed

High carrier density with hole-type carriers

Robust planar Hall effect up to high temperatures

Abstract

The study of topology protected electronic properties is a fascinating topic in present day condensed matter physics research. New topological materials are frequently being proposed and explored through various experimental techniques. Ta$_{3}$SiTe$_{6}$ is a newly predicted topological semimetal with fourfold degenerate nodal-line crossing in absence of spin-orbit coupling (SOC) and an hourglass Dirac loop, when SOC is included. Recent angle-resolved photoemission spectroscopy study in this material, has also confirmed Dirac like dispersions and two nodal-lines near the Fermi energy, protected by nonsymmorphic glide mirror symmetry. In this work, we present the detailed magnetotransport properties of single crystalline Ta$_{3}$SiTe$_{6}$. A nonsaturating magnetoresistance has been observed. Hall measurements reveal hole type charge carriers with high carrier density and a moderate value of carrier mobility. Furthermore, we report a robust planar Hall effect, which persists up to high temperatures. These results validate the nontrivial nature of the electronic band structure.