Terahertz rectennas on flexible substrates based on one-dimensional metal-insulator-graphene diodes

TL;DR

This paper introduces a flexible terahertz rectenna using a one-dimensional metal-insulator-graphene diode, demonstrating high responsivity and low noise for wearable energy harvesting applications.

Contribution

It presents a scalable fabrication of flexible THz rectennas with a novel one-dimensional junction diode on polyimide substrates.

Findings

Maximum voltage responsivity of 80 V/W at 167 GHz

Minimum noise equivalent power of 80 pW/√Hz

Operates effectively in the D-band (110-170 GHz)

Abstract

Flexible energy harvesting devices fabricated in scalable thin-film processes are important components in the field of wearable electronics and the Internet of Things. We present a flexible rectenna based on a one-dimensional junction metal-insulator-graphene diode, which offers low-noise power detection at terahertz (THz) frequencies. The rectennas are fabricated on a flexible polyimide film in a scalable process by photolithography using graphene grown by chemical vapor deposition. A one-dimensional junction area reduces the junction capacitance and enables operation in the D-band (110 - 170 GHz). The rectenna on polyimide shows a maximum voltage responsivity of 80 V/W at 167 GHz in free space measurements and minimum noise equivalent power of 80 pW/$\sqrt{\text{Hz}}$.