Selective Area Growth Rates of III-V Nanowires

TL;DR

This paper develops a model for the growth rates of selective area grown III-V nanowires, highlighting how design and control parameters influence growth and can be tuned for uniformity.

Contribution

It introduces a comprehensive model linking adatom mechanisms to growth rates, considering design and control parameters for SAG nanowires.

Findings

Design parameters affect nanowire growth rates.

Control parameters can switch growth modes.

Inhomogeneous growth can be compensated by design tuning.

Abstract

Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and desorption mechanisms that govern the growth rates of SAG nanowire (NW) arrays. We propose a model for the crystal growth rates that considers two parameter groups: the crystal growth control parameters and the design parameters. Using GaAs and InGaAs SAG NWs as platform we show how the design parameters such as NW pitch, width, and orientation have an impact on the growth rates. We demonstrate that by varying the control parameters (i.e. substrate temperature and beam fluxes) source, balance, and sink growth modes may exist in the SAG selectivity window. Using this model, we show that inhomogeneous growth rates can be compensated by tuning the design parameters.