Characterization and Mitigation of Electromigration Effects in TSV-Based Power Delivery Network Enabled 3D-Stacked DRAMs
Bobby Bose, Ishan Thakkar

TL;DR
This paper investigates electromigration effects in TSV-based power delivery networks of 3D-stacked DRAMs, characterizes their impact on performance and lifetime, and proposes a distributed TSV layout to mitigate these effects, significantly extending device lifetime.
Contribution
It introduces a new distributed TSV layout for PDNs in 3D-stacked DRAMs that reduces electromigration effects and enhances lifetime without extra pins.
Findings
Distributed TSV layout extends EM-affected lifetime by up to 10 years.
Proposed design improves energy-delay product by up to 1.51 times.
Characterization shows EM effects significantly impact 3D DRAM performance.
Abstract
With 3D-stacked DRAM architectures becoming more prevalent, it has become important to find ways to characterize and mitigate the adverse effects that can hinder their inherent access parallelism and throughput. One example of such adversities is the electromigration (EM) effects in the through-silicon vias (TSVs) of the power delivery network (PDN) of 3D-stacked DRAM architectures. Several prior works have addressed the effects of EM in TSVs of 3D integrated circuits. However, no prior work has addressed the effects of EM in the PDN TSVs on the performance and lifetime of 3D-stacked DRAMs. In this paper, we characterize the effects of EM in PDN TSVs on a Hybrid Memory Cube (HMC) architecture employing the conventional PDN design with clustered layout of power and ground TSVs. We then present a new PDN design with a distributed layout of power and ground TSVs and show that it can…
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