Linear-response magnetoresistance effects in chiral systems

TL;DR

This paper demonstrates that magnetoresistance effects related to chirality can occur in the linear response regime, providing new insights into the CISS effect and distinguishing spin-transport phenomena from other effects.

Contribution

It reveals that magnetoresistance effects can appear in the linear response regime in chiral systems, challenging previous assumptions and offering new methods to study CISS.

Findings

Magnetoresistance effects can occur in the linear response regime.

The CHMR effect helps distinguish spin-transport effects from other phenomena.

Experimental evidence from spin-valve and chiral thin film devices.

Abstract

The chirality-induced spin selectivity (CISS) effect enables the detection of chirality as electrical charge signals. It is often studied using a two-terminal circuit geometry where a ferromagnet is connected to a chiral component, and a change of electrical resistance is reported upon magnetization reversal. This is however not expected in the linear response regime because of compensating reciprocal processes, limiting the interpretation of experimental results. Here we show that magnetoresistance effects can indeed appear even in the linear response regime, either by changing the magnitude or the direction of the magnetization or an applied magnetic field. We illustrate this in a spin-valve device and in a chiral thin film as the CISS-induced Hanle magnetoresistance (CHMR) effect. This effect helps to distinguish spin-transport-related effects from other effects, and can thereby provide further insight into the origin of CISS.