Evolution of the electronic structure in Ta$_2$NiSe$_5$ across the structural transition revealed by resonant inelastic x-ray scattering
Haiyu Lu, Matteo Ross,1Jung-ho Kim, Hasan Yavas, Ayman Said, Abhishek, Nag, Mirian Garcia-Fernandez, Stefano Agrestini, Kejin Zhou, Chunjing Jia,, Brian Moritz, Thomas P. Devereaux, Zhi-Xun Shen, and Wei-Sheng Lee

TL;DR
This study uses resonant inelastic X-ray scattering to investigate the electronic structure and phase transition in Ta$_2$NiSe$_5$, revealing a direct band gap at low temperature and structural influences on the transition.
Contribution
It provides element-specific insights into the electronic structure across the phase transition, highlighting the largely structural nature of the transition with minimal excitonic contribution.
Findings
Confirmation of a direct band gap at low temperature
Persistence of conduction and valence band features across the transition
Evidence supporting a primarily structural phase transition
Abstract
We utilized high-energy-resolution resonant inelastic X-ray scattering (RIXS) at both the Ta and Ni -edges to map out element-specific particle-hole excitations in TaNiSe across the phase transition. Our results reveal a momentum dependent gap-like feature in the low energy spectrum, which agrees well with the band gap in element-specific joint density of states calculations based on ab initio estimates of the electronic structure in both the low temperature monoclinic and the high temperature orthorhombic structure. Below , the RIXS energy-momentum map shows a minimal gap at the Brillouin zone center ( 0.16 eV), confirming that TaNiSe possesses a direct band gap in its low temperature ground state. However, inside the gap, no signature of anticipated collective modes with an energy scale comparable to the gap size can be identified. Upon increasing the…
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