Accurate modelling of 3D-trench silicon sensor with enhanced timing performance and comparison with test beam measurements

TL;DR

This study combines advanced simulation tools to accurately model 3D-trench silicon sensors, achieving enhanced timing performance and validating results through comparison with test beam measurements.

Contribution

It introduces a comprehensive simulation approach for 3D-trench silicon sensors, enabling rapid, detailed device physics analysis and validation against experimental data.

Findings

Simulation closely matches test beam measurements

Enhanced timing performance demonstrated in the model

Efficient computational method enables large-scale studies

Abstract

This paper presents the detailed simulation of a double-pixel structure for charged particle detection based on the 3D-trench silicon sensor developed for the TIMESPOT project and a comparison of the simulation results with measurements performed at $\pi-$M1 beam at PSI laboratory. The simulation is based on the combined use of several software tools (TCAD, GEANT4, TCoDe and TFBoost) which allow to fully design and simulate the device physics response in very short computational time, O(1-100 s) per simulated signal, by exploiting parallel computation using single or multi-thread processors. This allowed to produce large samples of simulated signals, perform detailed studies of the sensor characteristics and make precise comparisons with experimental results.