Deciphering capacitance frequency technique for performance limiting defect state parameters in energy harvesting perovskites
Vikas Nandal, Sumanshu Agarwal, and Pradeep R. Nair

TL;DR
This paper develops a theoretical model to improve the accuracy of capacitance frequency technique in measuring trap state parameters in perovskite-based energy harvesting devices by accounting for electrostatic effects of trapped charges.
Contribution
It introduces a parabolic band approximation model that corrects for non-linear effects, enabling more precise trap density estimation in perovskite PIN devices.
Findings
Electrostatic effects cause non-linear energy bands, leading to underestimation of trap density.
The PBAEL model accurately predicts trap densities from CFT analysis.
Reducing perovskite thickness helps in better extracting trapped charge dynamics.
Abstract
With emerging thin film PIN based optoelectronics devices, a significant research thrust is focused on the passivation of trap states for performance enhancement. Among various methods, capacitance frequency technique (CFT) is often employed to quantify trap state parameters, however, the trapped charge induced electrostatic effect on the same is not yet established for such devices. Herein, we present a theoretical methodology to incorporate such effects in the CF characteristics of well-established carrier selective perovskite-based PIN devices. We show that the electrostatic effect of trapped charges leads to non-linear energy bands in perovskite layer which results in the underestimation of trap density from existing models of CFT. Consequently, a parabolic band approximation with effective length PBAEL model is developed which accurately predicts the trap density for shallow or…
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