High mobility SiMOSFETs fabricated in a full 300mm CMOS process

TL;DR

This paper reports the fabrication of high-mobility SiMOSFETs using a full 300mm CMOS process, demonstrating their potential for quantum computing applications due to high interface quality.

Contribution

It provides the first record mobility measurement of 17,500 cm2/Vs in SiMOSFETs fabricated in a standard CMOS process, with insights into material effects on device performance.

Findings

Record mobility of 17,500 cm2/Vs achieved

High-quality Si/oxide interface demonstrated

Influence of gate materials on mobility analyzed

Abstract

The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the quality of the devices fabricated in a full CMOS process. We report a record mobility of 17'500 cm2/Vs with a sub-10 nm oxide thickness indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors.