Stimulated emission of plasmon-LO mode in narrow gap HgTe/CdHgTe quantum wells
V.Ya. Aleshkin, A.A. Dubinov, V.I. Gavrilenko, F. Teppe
TL;DR
This paper demonstrates the possibility of stimulated emission of plasmon-LO modes in narrow HgTe/CdHgTe quantum wells, considering spatial dispersion effects, with potential for directional optimization.
Contribution
It provides a detailed calculation of plasmon-LO mode dispersion including spatial dispersion and identifies optimal directions for stimulated emission in specific quantum wells.
Findings
Stimulated emission occurs within the Reststrahlen band of GaAs.
Anisotropic dispersion favors the [03-1] direction for generation.
Narrow quantum wells enable plasmon-LO mode emission.
Abstract
We calculate the dispersion of the plasmon-LO modes taking into account the spatial dispersion of the electronic polarizability. It is shown that stimulated emission of the plasmon-LO mode is possible in the frequency range corresponding to the Reststrahlen band of GaAs both in a 6 nm wide HgTe/CdTe QW and in a 5 nm wide HgTe/Cd0.7Hg0.3Te QW grown on the (013) plane. Due to the anisotropy of the dispersion law for the plasmon-LO mode, the [03-1] direction appears to be optimal for generation.
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