Increased hole mobility in anti-ThCr$_2$Si$_2$-type La$_2$O$_2$Bi co-sintered with alkaline earth metal oxides for oxygen intercalation and hole carrier doping
Kota Matsumoto, Hideyuki Kawasoko, Noriaki Kimura, Tomoteru Fukumura

TL;DR
This study demonstrates that co-sintering La$_2$O$_2$Bi with alkaline earth metal oxides enhances hole mobility and electrical conduction through oxygen intercalation and hole doping, nearly doubling previous mobility levels.
Contribution
It introduces a novel co-sintering method with alkaline earth oxides to improve hole mobility in La$_2$O$_2$Bi by oxygen intercalation and doping.
Findings
Hole mobility increased to 150 cm$^2$V$^{-1}$s$^{-1}$.
Oxygen intercalation expanded the c-axis length.
SrO served as both oxygen intercalant and hole dopant.
Abstract
Metallic anti-ThCrSi-type OBi ( = rare earth) with Bi square nets show superconductivity while insulating LaOBi shows high hole mobility, by expanding the c-axis length through oxygen intercalation. In this study, alkaline earth metal oxides (CaO, SrO, and BaO) were co-sintered with LaOBi. CaO and BaO served as oxygen intercalants without incorporation of Ca and Ba in LaOBi. On the other hand, SrO served as not only oxygen intercalant but also hole dopant via Sr substitution with La in LaOBi. The oxygen intercalation and hole doping resulted in expansion of the c-axis length, contributing to improved electrical conduction. In addition, the hole mobility was enhanced up to 150 cmVs in LaOBi, which almost doubles the mobility in previous study.
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