A small-signal description of black phosphorus transistor technologies for high-frequency applications

TL;DR

This paper develops a small-signal equivalent circuit model for black phosphorus FETs, enabling accurate high-frequency performance prediction and the design of high-gain RF amplifiers at 2.4 GHz.

Contribution

It introduces a novel small-signal equivalent circuit for black phosphorus transistors that accurately models their RF performance across different technologies.

Findings

The EC accurately predicts experimental HF figures of merit.

Designed RF amplifiers achieve high gain and selectivity at 2.4 GHz.

The model facilitates efficient RF circuit design with black phosphorus transistors.

Abstract

This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorous field-effect transistors (BPFETs). The proposed EC is able to describe correctly both the experimental HF intrinsic and extrinsic figures of merit, as well as S-parameters, from different BPFET technologies. Single- and double-stage radio frequency gain amplifiers, are designed at 2.4 GHz using the experimentally-calibrated small-signal BPFET EC. Results show high-gain high-selective BPFET-based amplifiers.