Nonlinear circular valley photogalvanic effect
M. V. Entin, V. M. Kovalev

TL;DR
This paper presents a theoretical study of a nonlinear circular photogalvanic effect in 2D transition metal dichalcogenide monolayers, revealing a second-order intensity effect driven by valley population and carrier drift under specific optical conditions.
Contribution
It introduces a new nonlinear photogalvanic effect in non-gyrotropic 2D materials, expanding understanding of light-matter interactions in valleytronics.
Findings
The effect arises in second intensity order, unlike conventional linear effects.
It depends on valley population by circular in-plane fields.
Carrier drift is induced by linearly polarized in-plane fields with valley asymmetry.
Abstract
We develop a theory of circular photogalvanic effect in non-gyrotropic two-dimensional transition metal dichalcogenide monolayers under interband optical transitions. Oblique incidence of circularly-polarized electromagnetic field or normal incidence of elliptically polarized electromagnetic field is assumed. In contrast to the linear-in-intensity conventional photogalvanic effect, the effect considered here arises in the second intensity order. The effect is conditioned by i) the predominant population of the valleys by the circular in-plane electromagnetic field component and ii) the direct drift of the photo-excited carriers by the linear-polarized in-plane electromagnetic field component in the presence of trigonal valley asymmetry.
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