Time Resolution of the 4H-SiC PIN Detector

TL;DR

This paper measures the time resolution of 100 μm 4H-SiC PIN detectors for beta particles, investigates factors affecting it, and develops a simulation tool validated against experimental data.

Contribution

It provides the first detailed measurement of 4H-SiC PIN detector time resolution and introduces a validated simulation software for modeling their temporal response.

Findings

Measured time resolution of (94±1) ps for the detector.

Developed and validated RASER simulation software.

Simulated time resolution of (73±1) ps after intrinsic considerations.

Abstract

We address the determination of the time resolution for the $\rm 100~\mu m$ 4H-SiC PIN detectors fabricated by Nanjing University (NJU). The time response to $\rm \beta$ particles from a $\rm ^{90}$Sr source is investigated for the detection of the minimum ionizing particles (MIPs). We study the influence of different reverse voltages, which correspond to different carrier velocities and device sizes, and how this correlates with the detector capacitance. We determine a time resolution $\rm (94\pm1)~ps$ for $\rm 100~\mu m$ 4H-SiC PIN detector. A fast simulation software, termed RASER (RAdiation SEmiconductoR), is developed, and validated by comparing the waveform obtained from simulated and measured data. The simulated time resolution is $\rm (73\pm 1)~ps$ after considering the intrinsic leading contributions of the detector to time resolution.