Two-dimensional Ferroelectric Ferromagnetic Half Semiconductor in VOF monolayer

TL;DR

This paper predicts a stable 2D VOF monolayer exhibiting multiferroic properties, combining ferromagnetism and ferroelectricity with potential for nanoelectronic devices, and discusses its magnetic, electric, and mechanical characteristics.

Contribution

It introduces a novel 2D VOF monolayer as an intrinsic multiferroic with unique magnetic and electric properties, expanding the class of 2D multiferroics.

Findings

Large spin polarization (~2 μB/V atom)

Significant ferroelectric polarization (32.7 μC/cm^2)

Curie temperature around 215 K, tunable to room temperature with strain

Abstract

Two-dimensional (2D) multiferroics have been casted great attention owing to their promising prospects for miniaturized electronic and memory devices.Here, we proposed a highly stable 2D multiferroic, VOF monolayer, which is an intrinsic ferromagnetic half semiconductor with large spin polarization ~2 $\mu_{B}/V$ atom and a significant uniaxial magnetic anisotropy along a-axis (410 $\mu eV/V$ atom). Meanwhile, it shows excellent ferroelectricity with a large spontaneous polarization 32.7 $\mu C/cm^{2}$ and a moderate energy barrier (~43 meV/atom) between two ferroelectric states, which can be ascribed to the Jahn-Teller distortion.Moreover, VOF monolayer harbors an ultra-large negative Poisson's ratio in the in-plane direction (~-0.34). The Curie temperature evaluated from the Monte Carlo simulations based on the Ising model is about 215 K, which can be enhanced room temperature under -4% compressive biaxial strain.The combination of ferromagnetism and ferroelectricity in the VOF monolayer could provide a promising platform for future study of multiferroic effects and next-generation multifunctional nanoelectronic device applications.