Signature of spin-resolved quantum point contact in p-type trilayer WSe$_{2}$ van der Waals heterostructure

TL;DR

This paper reports the experimental realization of a spin-resolved quantum point contact in a p-type trilayer WSe2 van der Waals heterostructure, demonstrating quantized conductance and spin polarization signatures.

Contribution

It introduces a novel method to create a quantum point contact in WSe2 heterostructures and observes spin-resolved conductance plateaus, advancing spintronic device research.

Findings

Observation of quantized conductance steps at 0.5×2e^2/h

Detection of spin-polarized conductance plateaus at high magnetic fields

Successful realization of a spin-resolved quantum point contact

Abstract

In this study, the electrostatically induced quantum confinement structure, quantum point contact, has been realized in p-type trilayer tungsten diselenide-based van der Waals heterostructure with modified van der Waals contact method with degenerately doped transition metal dichalcogenide crystals. Clear quantized conductance and pinch-off state through the one-dimensional confinement were observed by dual-gating of split gate electrodes and top gate. Conductance plateaus were observed at step of 0.5 $\times$ 2e$^{2}$/h at zero and high magnetic field in addition to quarter plateaus at a finite bias voltage condition indicating the signature of spin-polarized quantum point contact realization.