Fabrication and Characterization of InAs/AlSb based Magnetic Hall Sensors

TL;DR

This paper reports the fabrication and characterization of InAs/AlSb heterostructure-based Hall sensors with high sensitivity and low noise, suitable for magnetic field detection at room temperature.

Contribution

It introduces a novel InAs/AlSb 2DEG Hall sensor with detailed fabrication, characterization, and noise analysis, demonstrating improved magnetic field resolution.

Findings

Carrier mobility of 1.8 m2/Vs at room temperature

Magnetic field resolution of approximately 1 μT/Hz^{1/2}

Successful fabrication of InAs/AlSb based Hall sensors

Abstract

Hall effect based magnetic field sensors are vector sensors which are sensitive to the perpendicular component of the magnetic field. Typically, Si-based Hall sensors are used for most usages requiring low field sensitivity. For higher sensitivity, III-V semiconductors such as GaAs, InSb, etc., provide better alternatives due to higher carrier mobilities at room temperature. In this work, Hall sensors based on two-dimensional electron gas (2DEG) at the heterostructure of InAs/AlSb are fabricated. The 2DEG is about 20 nm below the surface. Carrier density of 3.2x1016 /m2 and mobility of 1.8 m2/Vs were deduced via Hall measurements at RT. 1/f-noise analyses were carried out to calculate the magnetic field resolution of ~1 uT/Hz1/2.