Imaging antiferromagnetic domain fluctuations and the effect of atomic-scale disorder in a doped spin-orbit Mott insulator
He Zhao, Zach Porter, Xiang Chen, Stephen D. Wilson, Ziqiang Wang and, Ilija Zeljkovic

TL;DR
This study uses advanced microscopy to visualize antiferromagnetic domain fluctuations in a doped spin-orbit Mott insulator, revealing nanoscale AF puddles, their stability, and reorganization with temperature and disorder.
Contribution
It provides atomic-scale insight into how chemical disorder and temperature influence antiferromagnetic domains in a complex oxide, a topic previously limited by spatial resolution.
Findings
Nanometer-scale AF puddles cluster away from La dopants.
Thermal cycling causes reorganization of AF modulations.
AF puddles exhibit scale-invariant fractal geometry.
Abstract
Correlated oxides can exhibit complex magnetic patterns, characterized by domains with vastly different size, shape and magnetic moment spanning the material. Understanding how magnetic domains form in the presence of chemical disorder and their robustness to temperature variations has been of particular interest, but atomic-scale insight into this problem has been limited. We use spin-polarized scanning tunneling microscopy to image the evolution of spin-resolved modulations originating from antiferromagnetic (AF) ordering in a spin-orbit Mott insulator Sr3Ir2O7 as a function of chemical composition and temperature. We find that replacing only several percent of La for Sr leaves behind nanometer-scale AF puddles clustering away from La substitutions preferentially located in the middle SrO layer within the unit cell. Thermal erasure and re-entry into the low-temperature ground state…
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