Investigation of Forming Free Bipolar Resistive Switching Characteristics in Al/Mn3O4/FTO RRAM Device

TL;DR

This paper demonstrates a forming-free bipolar resistive switching in an Al/Mn3O4/FTO RRAM device, showing stable non-volatile memory behavior with distinct conduction mechanisms and filament formation, suitable for high-density memory applications.

Contribution

It reports a novel, forming-free bipolar resistive switching mechanism in Mn3O4-based RRAM with detailed conduction analysis and filament formation insights.

Findings

High resistance ratio (~102) between HRS and LRS

Different conduction mechanisms in LRS and HRS states

Stable non-volatile switching suitable for memory devices

Abstract

Bipolar resistive switching (BRS) phenomenon has been demonstrated in Mn3O4 using Al (Aluminum)/Mn3O4/FTO (Fluorine doped Tin Oxide) Resistive Random Access Memory (RRAM) device. The fabricated RRAM device shows good retention, non volatile behavior and forming free BRS. The Current-Voltage (I-V) characteristics and the temperature dependence of the resistance (R-T) measurements were used to explore conduction mechanisms and the thermal activation energy (Ea). The resistance ratio of high resistance state (HRS) to low resistance state (LRS) is ~102. The fabricated RRAM device shows different conduction mechanisms in LRS and HRS state such as ohmic conduction and space charge limited conduction (SCLC). The rupture and formation of conducting filaments (CF) of oxygen vacancies take place by changing the polarity of external voltage, which may be responsible for resistive switching characteristics in the fabricated RRAM device. This fabricated RRAM device is suitable for application in future high density non-volatile memory (NVM) RRAM devices.