Ultralow Threshold, Single-Mode InGaAs/GaAs Multi-Quantum Disk Nanowire Lasers
Xutao Zhang, Ruixuan Yi, Nikita Gagrani, Ziyuan Li, Fanlu Zhang,, Xuetao Gan, Xiaomei Yao, Xiaoming Yuan, Naiyin Wang, Jianlin Zhao, Pingping, Chen, Wei Lu, Lan Fu, Hark Hoe Tan, and Chennupati Jagadish

TL;DR
This paper reports the development of ultralow threshold, single-mode InGaAs/GaAs nanowire lasers operating in the near-infrared, with potential applications in integrated photonics and sensing.
Contribution
It introduces a novel nanowire laser design with minimized dimensions and passivation, achieving record low thresholds and stable single-mode operation at room temperature.
Findings
Threshold as low as 1.6 μJ/cm² at 5 K
Room temperature lasing with 48 μJ/cm² threshold
High quality factor exceeding 6400
Abstract
We present single-mode nanowire (NW) lasers with ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by excellent NW morphology and InGaAs/GaAs multi-quantum disks. At 5 K, a threshold low as 1.6 {\mu}J/cm2 per pulse is achieved with a resulting quality factor exceeding 6400. By further passivating the NW with an AlGaAs shell to suppress surface non-radiative recombination, single-mode lasing operation is obtained with a threshold of only 48 {\mu}J/cm2 per pulse at room temperature with a high characteristic temperature of 223 K and power output of ~ 0.9 {\mu}W. These single-mode, ultralow threshold, high power output NW lasers are…
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