Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride

TL;DR

This paper demonstrates a practical method to generate negatively charged boron vacancy spin defects in hexagonal boron nitride via ion implantation, enabling their use in quantum sensing and information devices.

Contribution

It introduces a straightforward ion implantation technique to produce V$_\text{B}^{-}$ defects in hBN with controllable properties, advancing the development of 2D quantum sensors.

Findings

V$ _\text{B}^{-} $ defects exhibit a zero-field splitting of ~3.47 GHz.

Optimal implantation parameters yield high-probability defect creation.

The method is simple and suitable for integrated hBN-based quantum devices.

Abstract

Optically addressable spin defects in wide-bandage semiconductors as promising systems for quantum information and sensing applications have attracted more and more attention recently. Spin defects in two-dimensional materials are supposed to have unique superiority in quantum sensing since their atomatic thickness. Here, we demonstrate that the negatively boron charged vacancy (V$ _\text{B}^{-} $) with good spin properties in hexagonal boron nitride can be generated by ion implantation. We carry out optically detected magnetic resonance measurements at room temperature to characterize the spin properties of V$ _\text{B}^{-} $ defects, showing zero-filed splitting of $ \sim $ 3.47 GHz. We compare the photoluminescence intensity and spin properties of V$ _\text{B}^{-} $ defects generated by different implantation parameters, such as fluence, energy and ion species. With proper parameters, we can create V$ _\text{B}^{-} $ defects successfully with high probability. Our results provide a simple and practicable method to create spin defects in hBN, which is of great significance for integrated hBN-based devices.