Magnetic susceptibility of crystals with crossing of their band-contact lines

TL;DR

This paper theoretically investigates how electron states near band-contact line crossings influence the orbital magnetic susceptibility in crystals, revealing unusual Fermi level and temperature dependencies that aid in detecting crossing points.

Contribution

It introduces a theoretical model for magnetic susceptibility near band-contact line crossings, explaining temperature dependence and providing insights into experimental observations.

Findings

Susceptibility shows unusual Fermi level dependence.

Susceptibility varies significantly with temperature near crossing points.

Results explain temperature-dependent susceptibility in V$_3$Si.

Abstract

We theoretically study the orbital magnetic susceptibility produced by electron states near a crossing point of two band-contact lines in a crystal. It is shown that this susceptibility can have an unusual dependence on the Fermi level and can change noticeably with the temperature when the Fermi level is in the vicinity of the crossing point. These features of the magnetic susceptibility can be useful in detecting the crossing points in crystal. The obtained results explain the well-known temperature dependence of the magnetic susceptibility of V$_3$Si.