In-situ tuned photoelectric properties of PtS$_2$ transistor

TL;DR

This paper demonstrates strain engineering of PtS₂ transistors using a ferroelectric substrate to significantly enhance their photoelectric performance, achieving high responsivity and detectivity.

Contribution

It introduces a novel method to tune PtS₂'s photoelectric properties via ferroelectric substrate-induced strain, improving device performance.

Findings

High strain-tuned ratio of 10^3

Responsivity up to 6.3×10^3 A/W

Detectivity of 9.3×10^12 Jones

Abstract

Strain engineering is a powerful and widely used strategy for boosting the performance of electronic and optoelectronic devices. Here, we demonstrate an approach to tune the photoelectric properties of Platinum sulfide (PtS$_2$) by using a ferroelectric substrate PMN-PT as the strain generator. It is found that both the drain current and responsivity of the PtS$_2$ photodetector is directly coupled to the electrostriction of PMN-PT, showing a high strain-tuned ratio $10^{3}$, high responsivity up to $6.3\times 10^{3}$ A/W and detectivity of $9.3\times 10^{12}$ Jones. Additionally, a high photogain $\approx 5\times 10^{5}$ is obtained at a gate voltage Vg = 15 V. Our results provide an effective method for manipulating electrical properties and optimizing performance of two dimensional layered (2D) materials based optoelectronic devices.