Review of Sulphur Interaction based GaAs Surface Passivation and Its Potential Application in Magnetic Tunnel Junction (MTJ) based Molecular Spintronics Devices (MTJMSD)

TL;DR

This paper reviews sulfur-based surface passivation techniques for GaAs, discussing their effectiveness and potential applications in magnetic tunnel junction-based molecular spintronics devices, highlighting recent trends and future prospects.

Contribution

It provides a comprehensive overview of GaAs surface passivation methods, emphasizing sulfur passivation and exploring its potential in molecular spintronics applications.

Findings

Sulfur passivation effectively reduces GaAs surface states.

Surface passivation techniques are crucial for advanced device applications.

Potential of GaAs in molecular spintronics is discussed.

Abstract

GaAs surface is characterized by a high density of surface states, which preclude the utilization of this semiconducting material for the realization of several advanced devices. Sulfur-based passivation has been found significantly useful in reducing the effect of dangling bonds. In this article first, the problem associated with GaAs surface has been discussed in a tutorial form. Secondly, a brief introduction of a wide variety of surface passivation methods was introduced. Sulfur passivation, the most effective surface state quenching method, has been elaborated. Thirdly, current trends in the field of surface passivation of GaAs surface have been discussed. Our discussion also focusses on utilizing GaAs and alloys for the molecular electronics and molecular spintronics and based on our insights in the GaAs (P. Tyagi, MRS Advances 2 (51), 2915-2920 2017) and molecular spintronics field ((P. Tyagi, D. F. Li, S. M. Holmes and B. J. Hinds, J. Am. Chem. Soc. 129 (16), 4929, 2007) and P. Tyagi, C. Riso, U. Amir, C. Rojas-Dotti and J. Mart\'inez-Lillo, RSC Advances 10 (22), 13006, 2020) ).