InAs nanocrystals with robust p-type doping
Lior Asor, Jing Liu, Yonatan Ossia, Durgesh C. Tripathi, Nir Tessler,, Anatoly I. Frenkel, Uri Banin

TL;DR
This paper demonstrates successful and stable p-type doping of InAs nanocrystals using cadmium, which also protects against oxidation, enabling their use in optoelectronic devices.
Contribution
It introduces a novel doping method with Cd for InAs nanocrystals, achieving stable p-type conductivity and oxidation resistance demonstrated through advanced structural and electronic analyses.
Findings
Cd acts as a substitutional p-dopant in InAs nanocrystals.
Cd-doped InAs FETs show stable hole conduction and mobility.
Cd doping provides oxidation protection to nanocrystals.
Abstract
Robust control over the carrier type is fundamental for the fabrication of nanocrystal-based optoelectronic devices, such as the p-n homojunction, but effective incorporation of impurities in semiconductor nanocrystals and its characterization is highly challenging due to their small size. Herein, InAs nanocrystals, post-synthetically doped with Cd, serve as a model system for successful p-type doping of originally n-type InAs nanocrystals, as demonstrated in field-effect transistors (FETs). Advanced structural analysis, using atomic resolution electron microscopy and synchrotron X-ray absorption fine structure spectroscopy reveal that Cd impurities reside near and on the nanocrystal surface acting as substitutional p-dopants replacing Indium. Commensurately, Cd-doped InAs FETs exhibited remarkable stability of their hole conduction, mobility, and hysteretic behavior over time when…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
