From Impurity Doping to Metallic Growth in Diffusion Doping: Properties and Structure of Ag Doped InAs Nanocrystals
Yorai Amit, Yuanyuan Li, Anatoly I. Frenkel, Uri Banin

TL;DR
This study investigates Ag doping in InAs nanocrystals using diffusion methods, revealing a two-stage doping process and the formation of metallic structures beyond a solubility limit, which impacts their electronic properties.
Contribution
It introduces a detailed two-stage doping model for Ag in InAs nanocrystals, linking structural and electronic changes during doping.
Findings
Doping occurs in two stages: initial impurity substitution and subsequent metallic growth.
Impurities substitute In atoms near the surface until a solubility limit is reached.
Beyond the solubility limit, metallic structures form rapidly.
Abstract
Tuning of the electronic properties of pre-synthesized colloidal semiconductor nanocrystals (NCs) by doping plays a key role in the prospect of implementing them in printed electronics devices such as transistors, and photodetectors. While such impurity doping reactions have already been introduced, the understanding of the doping process, the nature of interaction between the impurity and host atoms, and the conditions affecting the solubility limit of impurities in nanocrystals are still unclear. Here, we used a post-synthesis diffusion based doping reaction to introduce Ag impurities into InAs NCs. Optical absorption spectroscopy along with analytical inductively coupled plasma mass-spectroscopy (ICP-MS) were used to present a two stage doping model consisting of a "doping region" and a "growth region", depending on the concentration of the impurities in the reaction vessel. X-ray…
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