Vanadium Dioxide Thin Films Synthesized Using Low Thermal Budget Atmospheric Oxidation
P Ashok, Yogesh Singh Chauhan, Amit Verma

TL;DR
This paper presents a rapid atmospheric oxidation method to synthesize high-quality VO2 thin films with significant resistance and optical reflectance switching, reducing oxidation time by over tenfold compared to previous methods.
Contribution
The authors introduce a modified atmospheric oxidation process that significantly shortens VO2 film synthesis time while maintaining desirable phase transition and optical properties.
Findings
VO2 films exhibit ~3 orders of magnitude resistance change.
Optical reflectance switching observed in long-wave infrared.
Reduced oxidation duration by over an order of magnitude.
Abstract
Vanadium dioxide is a complex oxide material, which shows large resistivity and optical reflectance change while transitioning from the insulator to metal phase at ~68 {\deg}C. In this work, we use a modified atmospheric thermal oxidation method to oxidize RF-sputtered Vanadium films. Structural, surface-morphology and phase-transition properties of the oxidized films as a function of oxidation duration are presented. Phase-pure VO2 films are obtained by oxidizing ~130 nm Vanadium films in short oxidation duration of ~30 seconds. Compared to previous reports on VO2 synthesis using atmospheric oxidation of Vanadium films of similar thickness, we obtain a reduction in oxidation duration by more than one order. Synthesized VO2 thin film shows resistance switching of ~3 orders of magnitude. We demonstrate optical reflectance switching in long-wave infrared wavelengths in VO2 films…
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