Non-equilibrium diffusion of dark excitons in atomically thin semiconductors
Roberto Rosati, Koloman Wagner, Samuel Brem, Ra\"ul Perea-Caus\'in,, Jonas D. Ziegler, Jonas Zipfel, Takashi Taniguchi, Kenji Watanabe, Alexey, Chernikov, Ermin Malic

TL;DR
This study reveals that dark excitons in atomically thin semiconductors exhibit a unique, time-dependent diffusion behavior shortly after excitation, significantly impacting their transport properties and potential applications.
Contribution
The paper provides the first combined theoretical and experimental analysis of dark exciton spatial dynamics, uncovering a transient increase in diffusion coefficient during initial picoseconds.
Findings
Dark excitons are initially populated via phonon emission from bright states.
A transient, rapid expansion of excitons leads to a temporary increase in diffusion coefficient.
Unconventional, time-dependent diffusion deviates from steady-state behavior.
Abstract
Atomically thin semiconductors provide an excellent platform to study intriguing many-particle physics of tightly-bound excitons. In particular, the properties of tungsten-based transition metal dichalcogenides are determined by a complex manifold of bright and dark exciton states. While dark excitons are known to dominate the relaxation dynamics and low-temperature photoluminescence, their impact on the spatial propagation of excitons has remained elusive. In our joint theory-experiment study, we address this intriguing regime of dark state transport by resolving the spatio-temporal exciton dynamics in hBN-encapsulated WSe monolayers after resonant excitation. We find clear evidence of an unconventional, time-dependent diffusion during the first tens of picoseconds, exhibiting strong deviation from the steady-state propagation. Dark exciton states are initially populated by phonon…
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