EUV-induced Hydrogen Plasma : Pulsed Mode Operation and Confinement in Scanner

TL;DR

This paper investigates the characteristics of EUV-induced hydrogen plasma in scanner systems, focusing on pulsed operation and confinement effects to improve mirror longevity and reduce contamination in high-volume manufacturing of advanced ICs.

Contribution

It provides a detailed analysis of plasma parameters in confined geometries within EUV scanners, linking in-situ conditions to off-line experimental setups for better understanding.

Findings

EUV-induced hydrogen plasma exhibits specific parameters in confined geometries.

Pulsed mode operation influences plasma behavior and confinement.

Insights into plasma effects help optimize scanner component longevity.

Abstract

In the past years, EUV lithography scanner systems have entered High-Volume Manufacturing for state-of-the-art Integrated Circuits (IC), with critical dimensions down to 10 nm. This technology uses 13.5 nm EUV radiation, which is shaped and transmitted through a near-vacuum H2 background gas. This gas is excited into a low-density H2 plasma by the EUV radiation, as generated in pulsed mode operation by the Laser-Produced Plasma (LPP) in the EUV Source. Thus, in the confinement created by the walls and mirrors within the scanner system, a reductive plasma environment is created that must be understood in detail to maximize mirror transmission over lifetime and to minimize molecular and particle contamination in the scanner. Besides the irradiated mirrors, reticle and wafer, also the plasma and radical load to the surrounding construction materials must be considered. This paper will provide an overview of the EUV-induced plasma in scanner context. Special attention will be given to the plasma parameters in a confined geometry, such as may be found in the scanner area near the reticle. Also, the translation of these specific plasma parameters to off-line setups will be discussed.