Silicon Donor Array as a Disordered One-Dimensional Electron Gas

TL;DR

This paper models the effects of atomic-scale placement disorder of silicon donors on the electronic properties of donor arrays, relevant for quantum computing and simulation, highlighting how imperfections influence hybridization.

Contribution

It introduces a simple, accurate model incorporating central-cell corrections to analyze disorder effects in silicon donor arrays for quantum applications.

Findings

Disorder significantly affects inter-donor hybridization.

The model accurately predicts the impact of placement imperfections.

Implications for designing robust quantum donor arrays.

Abstract

Donors in silicon can now be positioned with an accuracy of about one lattice constant, making it possible in principle to form donor arrays for quantum computation or quantum simulation applications. However the multi-valley character of the silicon conduction band combines with central cell corrections to the donor state Hamiltonian to translate atomic scale imperfections in donor placement into strongly disordered inter-donor hybridization. We present a simple model that is able to account accurately for central-cell corrections, and use it to assess the impact of donor-placement disorder on donor array properties in both itinerant and localized limits.