Internal Smith-Purcell radiation and its interplay with Cherenkov diffraction radiation in silicon -- a combined time and frequency domain numerical study

TL;DR

This study uses combined time and frequency domain numerical methods to analyze internal Smith-Purcell radiation and its interaction with Cherenkov diffraction radiation in silicon, revealing dominant internal radiation under certain conditions.

Contribution

It provides a detailed numerical analysis of internal Smith-Purcell radiation and its interplay with Cherenkov radiation in silicon, highlighting conditions where internal radiation dominates.

Findings

Internal Smith-Purcell radiation dominates in certain regimes.

Internal radiation could improve contactless particle beam monitors.

The study employs combined time and frequency domain simulations.

Abstract

We consider radiation generated by an electron travelling parallel to a planar rectangular silicon grating: Smith-Purcell radiation to the vacuum side, internal Smith-Purcell radiation into the dielectric, and Cherenkov radiation into the dielectric. Internal Smith-Purcell radiation dominates over the other two radiation mechanisms in the range where conventional Smith-Purcell radiation is forbidden. This observation may lead to improved design of contactless particle beam monitors.