Wafer-scale, epitaxial growth of single layer hexagonal boron nitride on Pt(111)

TL;DR

This paper reports the successful wafer-scale epitaxial growth of single-layer hexagonal boron nitride on Pt(111) wafers using borazine vapor deposition, analyzing growth kinetics and crystal quality dependence on temperature.

Contribution

It demonstrates large-area epitaxial growth of h-BN on Pt(111) wafers and investigates the growth kinetics and structural quality as functions of temperature.

Findings

Growth follows a tanh^2 law at higher temperatures.

Epitaxy depends strongly on growth temperature.

Aligned coincidence lattice with substrate twinning observed.

Abstract

Single layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapour deposition at process temperatures between 1000 and 1300 K is in-situ investigated by photoelectron yield measurements. The growth kinetics is slower at higher temperatures and follows a tanh$^2$ law which better fits for higher temperatures. The crystal-quality of h-BN/Pt(111) is inferred from scanning low energy electron diffraction (x-y LEED). The data indicate a strong dependence of the epitaxy on the growth temperature. The dominant structure is an aligned coincidence lattice with 10 h-BN on 9 Pt(1$\times$1) unit cells and follows the substrate twinning at the millimeter scale.