Multi-hole models for deterministically placed acceptor arrays in silicon
Jianhua Zhu, Wei Wu, Andrew J. Fisher

TL;DR
This paper investigates the electronic structure and topological properties of acceptor arrays in silicon using multiple correlation methods, revealing edge states and symmetry-breaking phenomena relevant for quantum materials.
Contribution
It compares several computational approaches to model acceptor clusters, identifies topological edge states, and analyzes symmetry and charge distribution effects in silicon acceptor chains.
Findings
UHF and HL approximations closely match full CI for acceptor pairs and chains.
Finite chains exhibit topological edge states with 4-fold degeneracy.
Charge localization at chain ends indicates non-trivial edge states.
Abstract
We compute the electronic structure of acceptor clusters in silicon by using three methods to include electron correlations: the full configuration interaction, the Heitler-London approximation, and the unrestricted Hartree-Fock method. We show both the HL approach and the UHF method are good approximations to the ground state of the full CI calculation for a pair of acceptors and for finite linear chains. The total energies for finite linear chains show the formation of a 4-fold degenerate ground state when there is a weak bond at the end of the chain, which is shown to be a manifold of topological edge states. We identify a change in the angular momentum composition of the ground state at a critical pattern of bond lengths and show it is related to a crossing in the Fock matrix eigenvalues. We also test the symmetry of the UHF solution and compare it to the full CI; the symmetry is…
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