Beyond the CMOS sensors: the DoTPiX pixel concept and technology for the International Linear Collider A

TL;DR

This paper introduces the DoTPiX pixel concept, a novel detector technology using 1-micron pitch pixels with integrated amplification, aimed at achieving sub-micron resolution and enhanced radiation tolerance for the International Linear Collider.

Contribution

It proposes a new pixel detector design with a buried charge-collecting gate and integrated transistor amplification, leveraging advanced silicon processes for high precision particle detection.

Findings

Device simulations support the feasibility of the DoTPiX structure.

The pixel design aims for sub-micron spatial resolution.

Development is ongoing at IRFU and collaborating labs.

Abstract

CMOS sensors were successfully implemented in the STAR tracker [1]. LHC experiments have shown that efficient b tagging, reconstruction of displaced vertices and identification of disappearing tracks are necessary. An improved vertex detector is justified for the ILC. To achieve a point(spatial single layer) resolution below the one-{\mu}m range while improving other characteristics (radiation tolerance and eventually time resolution) we will need the use of 1-micron pitch pixels. Therefore, we propose a single MOS transistor that acts as an amplifying device and a detector with a buried charge-collecting gate. Device simulations both classical and quantum, have led to the proposed DoTPiX structure. With the evolution of silicon processes, well below 100 nm line feature, this pixel should be feasible. We will present this pixel detector and the present status of its development in both our institution (IRFU) and in other collaborating labs (CNRS/C2N).