Fundamental miniaturization limits for MOSFETs with a monolayer MoS$_2$ channel

TL;DR

This paper presents a theoretical model for MoS2 monolayer transistors, estimating their fundamental miniaturization limits and showing potential for channels as short as 2.5-3 nm, surpassing silicon MOSFETs.

Contribution

It introduces an analytical model for MoS2 transistors that predicts their minimum channel length constrained by quantum tunneling, highlighting their potential for ultra-scaled devices.

Findings

Minimum channel length estimated at 2.5-3 nm due to quantum tunneling.

MoS2's large effective electron mass enables shorter device channels.

Potential for ultra-fast, next-generation electronics.

Abstract

We propose a theoretical model for describing the operation of a transistor with a MoS2 monolayer channel, which allows to obtain an analytical approximation of the potential in the channel. This potential depends on the drain and gate voltages. On this basis we make estimates for the minimum channel lengths due to the fundamental restriction of quantum tunneling through the barrier. It is shown that the relatively large effective mass of electrons in the MoS2 monolayer allows to predict the creation of devices with channels of a significantly shorter (2.5 - 3 nm) length than in traditional silicon MOSFETs. These devices can be promising for the ultra-fast electronics of new generation.