1320 nm Light Source From Deuterium Treated Silicon

TL;DR

This paper presents a room-temperature 1320 nm light source from nanostructured silicon activated by deuterium treatment, involving surface nanostructuring and defect states, with potential applications in silicon photonics.

Contribution

It demonstrates a novel deuterium treatment method to produce a near-infrared silicon light source at 1320 nm, integrating surface nanostructuring and defect engineering.

Findings

Deuterium treatment creates a strong 1320 nm emission band.

Surface treatment enhances electrical rectification properties.

The photon source is linked to oxygen-related defect states.

Abstract

We report an efficient room temperature photon source at 1320 nm telecommunication wavelength from nanostructured silicon surface. The activation of this light source was realized by treating the surface of Si wafer by vapor of heavy water (D2O) containing a mixture of hydrofluoric and nitric acids. Treatment without deuterium generates an intense light emission band at the band-edge of Si, while the deuterium treatment alone creates a strong emission band at 1320 nm in the near infrared. It was found that the deuterium is actively involved in the formation of a nanostructured Si surface as evidenced from relative strength of the Si-O vibrational modes and presence of N-D bondings. The origin of this photon source was discussed in terms of oxygen related defect states and dislocations. The Si surface treated by Deuterium containing mixture exhibits a strong rectifying electrical activity as it is demonstrated by Schottky diodes fabricated on these wafers. Being compatible with mature silicon circuitry, the source may find applications in photonics and optoelectronics.