Impurity-band optical transitions in two-dimensional Dirac materials under strain-induced synthetic magnetic field

TL;DR

This paper develops a theoretical framework for understanding how strain-induced synthetic magnetic fields influence impurity-related optical transitions in 2D Dirac materials, revealing potential for valley magneto-optoelectronic applications.

Contribution

It introduces a new theory describing impurity-related optical transitions in 2D transition metal dichalcogenides under strain-induced synthetic magnetic fields.

Findings

Optical properties depend on the synthetic magnetic field strength.

Strain can be used to manipulate valley-specific optical transitions.

Potential applications in valley magneto-optoelectronics.

Abstract

We develop a theory of optical transitions in Coulomb impurity-doped two-dimensional transition metal dichalcogenide monolayers and study the transitions from the spin-resolved valence band to the (Coulomb) donor and acceptor impurities under the influence of a synthetic valley-selective magnetic field produced by a mechanical strain. It is shown that the optical properties of the system are determined by the strength of the synthetic magnetic field, which uncovers an experimental tool, which can be used to manipulate the properties of two-dimensional materials in valley magneto-optoelectronics.