Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon
F. N. Krauth, S. K. Gorman, Y. He, M. T. Jones, P. Macha, S. Kocsis,, C. Chua, B. Voisin, S. Rogge, R. Rahman, Y. Chung, and M. Y. Simmons

TL;DR
This paper proposes a flopping-mode electric dipole spin resonance qubit in phosphorus-doped silicon, leveraging engineered nuclear spin states to reduce noise and enable high-fidelity control for scalable quantum computing.
Contribution
It introduces a novel donor-based qubit design that minimizes magnetic noise and demonstrates potential for high-fidelity operations and long-distance coupling in silicon quantum processors.
Findings
Achieves $ ext{pi/2-X}$ gate error rates of $ extasciitilde 10^{-4}$ with realistic noise models.
Minimizing hyperfine interactions reduces charge noise and enhances qubit coherence.
Facilitates strong coupling to microwave cavities for long-distance qubit interactions.
Abstract
Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in high-frequency magnetic field control at the nanometre-scale. Here, we present a proposal for a flopping-mode electric dipole spin resonance qubit based on the combined electron and nuclear spin states of a double phosphorus donor quantum dot. The key advantage of utilising a donor-based system is that we can engineer the number of donor nuclei in each quantum dot. By creating multi-donor dots with antiparallel nuclear spin states and multi-electron occupation we can minimise the longitudinal magnetic field gradient, known to couple charge noise into the device and dephase the qubit. We describe the operation of the qubit and show that by minimising the…
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Taxonomy
TopicsQuantum and electron transport phenomena · Physics of Superconductivity and Magnetism · Magnetic properties of thin films
