An Ultrahigh-Q Microresonator on 4H-silicon-carbide-on-insulator Platform for Multiple Harmonics, Cascaded Raman Lasing and Kerr Comb Generations

TL;DR

This paper reports the development of an ultrahigh-Q microresonator on a 4H-silicon-carbide platform, enabling efficient nonlinear optical processes, broadband frequency conversions, cascaded Raman lasing, and Kerr frequency comb generation.

Contribution

It introduces the first demonstration of cascaded Raman lasing in a SiC microresonator with ultrahigh Q, advancing SiC photonic integrated devices.

Findings

Achieved an ultrahigh Q factor of 7.1 million in SiC microresonator.

Observed broadband frequency conversions including harmonic generations.

Demonstrated cascaded Raman lasing and Kerr frequency combs from 1300 to 1700 nm.

Abstract

The realization of ultrahigh quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high Q resonators provide an extreme environment of storage of light to enable observations of many unconventional nonlinear optical phenomenon with high efficiencies. Here, we demonstrate an ultra-high Q factor (7.1*10^6) microresonator on the 4H-silicon-carbide-on-insulator (4H-SiCOI) platform in which both \c{hi}^(2) and \c{hi}^(3) nonlinear processes of high efficiencies have been generated. Broadband frequency conversions, including second-, third-, fourth-harmonic generation were observed. Cascaded Raman lasing was demonstrated in the SiC microresonator for the first time to the best of our knowledge. Broadband Kerr frequency combs covering from 1300 to 1700 nm were achieved using a dispersion-engineered SiC microresonator. Our demonstration is a significant milestone in the development of SiC photonic integrated devices.